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2SK3019 Metal Oxide-Silicon Field Effect Transistors 2SK3019 Metal Oxide-Silicon Field Effect Transistors 2SK3019 Metal Oxide-Silicon Field Effect Transistors
2SK3019 Metal Oxide-Silicon Field Effect Transistors

type: N-Channel

Vdss: 30V

Id: 0.1A

RDS(on)@VGS, ID: 8Ω@4V, 10mA

Vgs(th)@Id: 0.8V@100μA


Product Details

Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


General Description

The 2SK3019 is a compact N-Channel Enhancement MOSFET designed for low-power switching and control applications. Encased in a small SOT-523 package, this MOSFET offers reliable performance in space-constrained designs, making it ideal for portable and consumer electronics where efficient switching is crucial.


Features

● Low on-resistance

● Fast switching speed

● Low voltage drive makes this device ideal for portable equipment

● Easily designed drive circuits

● Easy to parallel


Applications

● Low-Power Switching: Ideal for low-power switching tasks in compact electronic devices and consumer products.

● Signal Processing: Suitable for signal processing applications requiring precise control and efficient operation.

● Portable Electronics: Perfect for portable electronics where size and power efficiency are critical.



2SK3019 SOT-523_0.jpg


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