Product Summary
● V_DS 30V
● I_D 300mA
● R_DS(ON)( at V_GS=10V) ＜8.0ohm
● R_DS(ON)( at V_GS=4.5V) ＜13.0ohm
● ESD Protected Up to 2.5KV (HBM)

General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage

Applications
● Battery operated systems
● Solid-state relays
● Direct logic-level interface：TTL/CMOS