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Low Voltage MOSFET

SL2306 N-Channel Enhancement MOSFET SOT-23

SL2306 N-Channel Enhancement MOSFET SOT-23

SL2306 N-Channel Enhancement MOSFET SOT-23

SL2306 N-Channel Enhancement MOSFET SOT-23

t_ype：N-Channel

V_dss：20V

I_d：4A

P_d：1200mW

R_DS(on)@V_gs,I_d：60mΩ@2.5V,2A

V_gs(th)@I_d：1.5V@250uA

Inquiry Datasheet

Product Details

MAXIMUM RATINGS

Characteristic	Symbol	Max	Unit
Drain-SourceVoltage	BVDSS	20	V
Gate-SourceVoltage	VGS	10	V
DrainCurrent(continuous)	ID	4	A
DrainCurrent(pulsed)	IDM	15	A
TotalDeviceDissipation	PD	1200	mW
TA=25℃	PD	1200	mW
Junction	TJ	150	℃
SolderTemperature/SolderTime	T/t	260/10	℃/S
StorageTemperature	Tstg	-55to+150	℃

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