● Description:
The BSS205N N-Channel Enhancement MOSFET SOT-23 is a versatile and high-performance semiconductor component designed for reliable and efficient switching applications. With a robust maximum drain-source voltage of 20V and a continuous drain current rating of 2.5A, this MOSFET offers excellent power handling and low resistance for a wide range of electronic circuits.

● Features:

● Trench Power LV MOSFET technology

● High Power and current handing capability

● Application:

● PWM application

● Load switch