● Description:
The FDN305N N-Channel Enhancement MOSFET SOT-23 is designed to deliver reliable and efficient switching in a compact package. With a maximum drain-to-source voltage (V_ds) of 20V and a continuous drain current (I_d) of 0.9A, this MOSFET is engineered to handle moderate power requirements with precision. Its low on-resistance and low gate threshold voltage make it an ideal choice for various electronic applications.

● Features:

● Trench Power LV MOSFET technology

● High density cell design for low R_DS(ON)

● High Speed switching

● Application:

● Battery protection

● Load switch

● Power management