● Description:
This N-Channel MOSFET is designed to deliver high performance in various electronic applications. It features a maximum drain-source voltage (V_dss) of 30V, and a continuous drain current (I_d) of 2.2A. With a power dissipation (P_d) rating of 0.5W, this MOSFET provides reliable operation while maintaining low power consumption.

● Features:

● Trench Power LV MOSFET technology

● High density cell design for low R_DS(ON)

● High Speed switching

● Application:

● Battery protection

● Load switch

● Power management