Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

General Description

The FDN337N N-Channel Enhancement MOSFET, presented in a compact SOT-23 package, is designed for high-efficiency switching and control in various electronic applications. Its excellent performance metrics, including low on-resistance and substantial drain current capability, make it a versatile component for power management and signal switching.

Features

● Trench Power LV MOSFET technology

● High density cell design for low RDS_(ON)

● High Speed switching

Applications

● Battery protection 

● Load switch 

● Power management