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FDN338P P-Channel Enhancement MOSFET SOT-23 FDN338P P-Channel Enhancement MOSFET SOT-23 FDN338P P-Channel Enhancement MOSFET SOT-23
FDN338P P-Channel Enhancement MOSFET SOT-23

type: P-Channel

Vdss:-20V

Id:-1.6A

RDS(on)@VGS, ID:75mΩ@-4.5V, -1.6A

Vgs(th)@Id: -0.7V@-250μA


Product Details

Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


General Description

The FDN338P P-Channel Enhancement MOSFET, presented in a compact SOT-23 package, is designed for efficient switching and control in electronic applications that require handling negative voltages. With its low on-resistance and substantial current handling capability, the FDN338P is ideal for circuits needing reliable performance in negative voltage environments.

Features

● Leading trench technology for low RDS(on) 

● Low Gate Charge


Applications

● Video monitor

● Power management



FDN338P  SOT-23_0.jpg


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