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FDV305N N-Channel Enhancement MOSFET SOT-23 FDV305N N-Channel Enhancement MOSFET SOT-23 FDV305N N-Channel Enhancement MOSFET SOT-23
FDV305N N-Channel Enhancement MOSFET SOT-23

type: N-Channel

Vdss:20V

Id:0.9A

RDS(on)@VGS, ID:170mΩ@4.5V, 0.9A

Vgs(th)@Id: 1V@250μA


Product Details

Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


General Description

The FDV305N N-Channel Enhancement MOSFET, housed in a compact SOT-23 package, is engineered for efficient switching and control in various electronic applications. Designed to deliver reliable performance with its low gate threshold voltage and low on-resistance, the FDV305N is well-suited for space-constrained and power-sensitive designs.

Features

● Trench Power LV MOSFET technology

● High density cell design for low RDS(ON)

● High Speed switching


Applications

● Battery protection 

● Load switch 

● Power management



FDV305N  SOT-23_0.jpg


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