Description

lThis Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DCpower conversion, load switch and industrial power applications. 

Features

lVDS=30V，ID=100A

lRDS（on）Typ=2.9mΩ@VGS=10V

lRDS（on）Typ=4.8mΩ@VGS=4.5V

lLow FOM RDS(on)×Qgd

l100% avalanche tested

lEasy to use/drive

lRoHS compliant

Application

lPower Management

lPWM Application

lLoad Switch