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Description
lThis p-Channel MOSFET uses advanced trench technology anddesign to provide excellent Roson, with low gate charge. It can be used in a wide variety of applications.
Features
lVDS=-40V,l=-10A,RDS(ON)<15m Ω @VGS=-10V
lLow gate charge.
lGreen device available.
lAdvanced high cell denity trench technology for ultra RDS(ON).
lExcellent package for good heat dissipation.
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