● Description:
The SL160N03Q N-Channel Enhancement MOSFET PDFN-8L(5x6) is designed for demanding applications where efficiency and reliability are crucial. This MOSFET boasts a maximum drain-source voltage of 30V and a substantial continuous drain current capability of 160A, making it ideal for high-power switching tasks.

● Features:

● VDS=30V，ID=160A
● RDS（ON）TYP = 1.6mΩ @VGS =10V
● RDS（ON）TYP = 2.3mΩ @VGS =4.5V
● Very Low On-resistance RDS(ON)
● LowCrss
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability  

● Application:

● PWM Application
● Load Switch
● Power Management