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SL2016 P-Channel Enhancement MOSFET SOT-23

type: P-Channel

Vdss: 20V

Id: 4.7A

RDS(on)@VGS, ID: 37mΩ@4.5V, 3.6A

Vgs(th)@Id: 0.7V@250μA


Product Details

Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


General Description

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.


Features

● Trench Power LV MOSFET technology

● High Power and current handing capability


Applications

● PWM application

● Load switch

Product Summary
VDS  RDS(ON) MAX  ID MAX
20V 47mΩ@4.5V    4.7A
65mΩ@2.5V


SL2016 SOT-23_00.png


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