● Description:

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.

● Features:

● V_DS = 30V,I_D =150A

● R_DS(ON)，2.8 mΩ(Typ) @ V_GS =10V

● R_DS(ON)，4.4mΩ(Typ) @ V_GS =4.5V

● Advanced Trench Technology

● Provide Excellent RDS(ON) and Low Gate Charge

● Lead free product is acquired

● Application:

● Load Switch
● PWM Application
● Power management