● Description:

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.

● Features:

● VDS = 30V,ID =150A

● RDS(ON)，2.8 mΩ(Typ) @ VGS =10V

● RDS(ON)，4.4mΩ(Typ) @ VGS =4.5V

● Advanced Trench Technology

● Provide Excellent RDS(ON) and Low Gate Charge

● Lead free product is acquired

● Application:

● Load Switch
● PWM Application
● Power management