● Description:
This N-Channel MOSFET provides reliable operation with a maximum drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) of 3.8A. With a low on-resistance (R_ds(on)) of just 43mΩ at a gate-source voltage (V_gs) of 10V and a drain current of 3.8A, this MOSFET ensures minimal power loss and efficient performance. The threshold voltage (V_gs(th)) is a low 0.5V, enabling it to switch on with minimal gate drive.

● Features:

● Trench Power LV MOSFET technology

● High density cell design for low R_DS(ON)

● High Speed switching

● Application:

● Battery protection

● Load switch

● Power management