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SL3424 Metal Oxide-Silicon Field Effect Transistors SL3424 Metal Oxide-Silicon Field Effect Transistors SL3424 Metal Oxide-Silicon Field Effect Transistors
SL3424 Metal Oxide-Silicon Field Effect Transistors

type: N-Channel

Vdss: 30V

Id: 3.8A

RDS(on)@VGS, ID: 43mΩ@10V, 3.8A

Vgs(th)@Id: 1V@250μA


Product Details

Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


General Description

The SL3424 is a high-performance N-Channel Enhancement MOSFET housed in a compact SOT-23 package. Designed for efficient switching and control in various electronic applications, this MOSFET offers a blend of high current capability and low on-resistance, making it an ideal choice for both consumer and industrial electronics.


Features

● Trench Power LV MOSFET technology

● High density cell design for low RDS(ON)

● High Speed switching


Applications

● Battery protection 

● Load switch 

● Power management




SL3424 SOT-23_0.jpg


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