● Description:
This N-Channel MOSFET maximum Drain-Source Voltage (V_dss) of 30V, making it ideal for a wide range of electronic applications. With a maximum Continuous Drain Current (I_d) of 6A and a Power Dissipation (P_d) of 2W, it ensures efficient power handling and thermal stability. The low R_DS(on) of 19mΩ at V_gs of 10V and Id of 5.6A ensures minimal conduction losses, while the Gate-Source Threshold Voltage (V_gs(th)) is just 1V at 250μA, facilitating easy drive and control.

● Features:

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

● Application:

● Battery protection 

● Load switch 

● Power management