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SL50P06D P-Channel Enhancement MOSFET TO-252

type: P-Channel

Vdss: -60V

Id: -50A

RDS(on)@VGS, ID: 16.5mΩ@-10V, -20A

Vgs(th)@Id: -1.6V@-250μA


Product Details

Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


General Description

This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.


Features

● VDS=-60V,ID=-50A,RDS(ON)<20mΩ@VGS=-10V

● Low gate charge.

● Green device available.

● Advanced high cell denity trench technology for ultra Iow RDS(ON).

● Excellent package for good heat dissipation.

Applications

● PWM application

● Load switch

SL50P06D TO-252_00.png


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