Description

lThis Power MOSFET is produced using advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

lVDS= 30V，ID=90A

lRDS（ON）TYP = 3.6mΩ @ VGS =10V

lRDS（ON）TYP = 5.3mΩ @VGS =4.5V

lVery Low On-resistance RDS(ON)

lLow Crss

lFast switching

l100% avalanche tested

lImproved dv/dt capability

Application

lPortable Equipment and Battery Powered systems

lPower Management in Notebook Computer