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P-Channel Enhancement Mode Field Effect Transistor
V(BR)DSS | RDS(on)MAX | ID |
-30V | 60mΩ@-10V | -4.2A |
70mΩ@-4.5V | ||
85mΩ@-2.5V |
FEATURE
● High dense cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum
● DC current capability
APPLICATION
● Load Switch for Portable Devices
● DC/DC Converter
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