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Description
A P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
Features
Ø1.8 V RDSon rated for Low Voltage Gate Drive
ØVery fast switching
ØTrench MOSFET technology
Applications
ØRelay driver
ØHigh-speed line driver
ØHigh-side loadswitch
ØSwitching circuits
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