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SL2307 P-Channel Enhancement MOSFET SOT-23 SL2307 P-Channel Enhancement MOSFET SOT-23 SL2307 P-Channel Enhancement MOSFET SOT-23
SL2307 P-Channel Enhancement MOSFET SOT-23

type:P-Channel

Vdss:30V

Id:4.1A

Pd:300mW

RDS(on)@Vgs,Id60mΩ@10V,4.1A

Vgs(th)@Id:3V@250μA

Product Details

General Description

The SL2307 uses advanced trench technology to provide excellentRps(ony with low gate charge. This device is suitable for use as a loadswitch or in PwM applications.

Maximum ratings (T=25'℃unless otherwise noted)

Parameter Symbol Value Units
Drain-Sourcevoltage VDS -30 V
Gate-SourceVoltage VGS ±20 V
ContinuousDrainCurrent ID -4.1 A
DrainCurrent-Pulsed IDM -20 A
PowerDissipation PD 300 mW
ThermalResistancefromJunctiontoAmbient RθJA 417 ℃/W
JunctionTemperature TJ 150
StorageTemperature TSTG -55~+150

SL2307_00.jpg


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