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P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS -12V
● lD -6A
● RDSON(at VGS=-4.5V) <40 mohm
● RDSON(at VGS=-2.5V) <50 mohm
● RDSON(at VGS=-1.8V) <70 mohm
General Description
● Trench Power LV MOSFET technology
● High Density Cell Design for Low RosoN
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
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