Product Details

N-Channel Power MOSFET

Characteristic	Symbol	Max	Unit
Drain-SourceVoltage	BVDSS	30	V
Gate-SourceVoltage	VGS	20	V
DrainCurrent(continuous)	ID	5	A
DrainCurrent(pulsed)	IDM	18	A
TotalDeviceDissipation	PD	1400	mW
TA=25℃	PD	1400	mW
Junction	TJ	150	℃
StorageTemperature	Tstg	-55to+150	℃

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