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Description
Introducing the 2N5551 NPN Bipolar Transistor, a high-performance component designed for demanding electronic applications. Housed in a TO-92 package, this transistor offers a maximum collector-emitter voltage (Vceo) of 160V and supports a collector current (Ic) of up to 0.6A. With a power dissipation capability of 625mW and a low saturation voltage (VCE(sat)) of 0.2V, it ensures efficient operation. The 2N5551 also boasts an impressive transition frequency (fT) of 300MHz, making it suitable for high-frequency applications.
FEATURES
● General Purpose Switching Application
● NPN Transistors
Application
● High-Frequency Amplification: Ideal for use in RF and high-speed analog circuits requiring rapid signal processing and high-frequency response.
● Switching Circuits: Perfect for medium-current switching applications where low saturation voltage and high voltage tolerance are essential.
● Power Supply Regulation: Suitable for linear voltage regulators and other power management circuits where stability and performance are critical.
● Signal Processing: Effective in audio and communication systems where high gain and low noise are required.
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