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2N5551 NPN Bipolar Transistor TO-92 2N5551 NPN Bipolar Transistor TO-92 2N5551 NPN Bipolar Transistor TO-92
2N5551 NPN Bipolar Transistor TO-92

Vceo:160V

Ic:0.6A

Pd:625mW

VCE(sat):0.2V

fT:300MHz

Working temperature:150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description

Introducing the 2N5551 NPN Bipolar Transistor, a high-performance component designed for demanding electronic applications. Housed in a TO-92 package, this transistor offers a maximum collector-emitter voltage (Vceo) of 160V and supports a collector current (Ic) of up to 0.6A. With a power dissipation capability of 625mW and a low saturation voltage (VCE(sat)) of 0.2V, it ensures efficient operation. The 2N5551 also boasts an impressive transition frequency (fT) of 300MHz, making it suitable for high-frequency applications.

FEATURES

● General Purpose Switching Application
● NPN Transistors

Application

● High-Frequency Amplification: Ideal for use in RF and high-speed analog circuits requiring rapid signal processing and high-frequency response.

● Switching Circuits: Perfect for medium-current switching applications where low saturation voltage and high voltage tolerance are essential.

● Power Supply Regulation: Suitable for linear voltage regulators and other power management circuits where stability and performance are critical.

● Signal Processing: Effective in audio and communication systems where high gain and low noise are required.


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