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2SA1013-Y PNP Bipolar Transistor SOT-89

Vceo:-160V

Ic:-1A

Pd:0.5W

VCE(sat):-1.5V

fT:15MHz

Working temperature:150℃(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description

The 2SA1013-Y PNP Bipolar Transistor is a high-performance device designed for applications requiring reliable and efficient operation. With a collector-emitter voltage rating (Vceo) of -160V and a maximum collector current (Ic) of -1A, this transistor is well-suited for high-voltage environments. It features a saturation voltage (VCE(sat)) of -1.5V and a transition frequency (fT) of 15MHz, making it ideal for a variety of switching and amplification tasks.


Features

● High voltage

● Large continuous collector current capability 


Applications

● Signal Amplification: Ideal for low to medium-power amplification in audio and RF circuits.

● Switching Applications: Effective for use in electronic switching devices and relay drivers.

● Motor Control: Suitable for controlling small motors in consumer electronics and robotics.

● Power Management Circuits: Perfect for voltage regulation and power distribution applications.

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