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2SA1037-R PNP Bipolar Transistor SOT-23 2SA1037-R PNP Bipolar Transistor SOT-23 2SA1037-R PNP Bipolar Transistor SOT-23
2SA1037-R PNP Bipolar Transistor SOT-23

Vceo:-50V

Ic:150mA

Pd:200mW

VCE(sat)@Ic,Ib:-0.5V@-50mA,-5mA

fT:140MHz

Working temperature:150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description:

The 2SA1037-R PNP Digital Transistor is a high-performance PNP transistor designed to deliver reliable operation in demanding electronic applications. With a maximum collector-emitter voltage (Vceo) of 50V, it is well-suited for various switching and amplification tasks. The transistor boasts a high transition frequency (fT) of 140MHz, making it ideal for high-speed signal processing.


FEATURES

● Collector Current Capability IC=150mA

● Collector Emitter Voltage VCEO=-50V

● Complments the 2SC2412


Application:

The 2SA1037-R PNP Digital Transistor excels in applications requiring high-speed switching and amplification with a stable operation under high temperatures. It is commonly used in:

● High-Frequency Amplifiers: Due to its 140MHz transition frequency, it is suitable for RF amplifiers and high-speed signal processing circuits.

● Switching Circuits: Ideal for use in low-power switching applications where efficiency and reliability are critical.

● Temperature-Resilient Designs: Its ability to operate at temperatures up to 150°C makes it suitable for use in harsh environmental conditions.


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