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2SB1132-R PNP Bipolar Transistor SOT-89

Vceo:-32V

Ic:-1A

Pd:0.5W

VCE(sat):0.5V

Working temperature:150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description
Introducing the 2SB1132-R PNP Bipolar Transistor, a high-performance component designed for demanding low-voltage and medium-current applications. Housed in a compact SOT-89 package, this transistor features a maximum collector-emitter voltage (Vceo) of -32V, suitable for various switching and amplification needs. With a collector current (Ic) capability of up to -1A and a power dissipation rating of 0.5W, it offers reliable performance in a range of circuits. The 2SB1132-R also boasts a low saturation voltage (VCE(sat)) of 0.5V, ensuring efficient operation.


FEATURES

● Low VCE(sat) 

● Compliments to 2SD1664


Application:

● Switching Circuits: Ideal for medium-current switching applications where space and efficiency are important.

● Signal Amplification: Suitable for low-voltage amplification tasks requiring reliable performance.

● Power Management: Effective in power management circuits where low saturation voltage and compact size are advantageous.

● Consumer Electronics: Perfect for use in consumer electronics that demand efficient and reliable transistor performance.


2SB1132-R SOT-89_0.jpg

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