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2SB1188-R PNP Bipolar Transistor SOT-89 2SB1188-R PNP Bipolar Transistor SOT-89 2SB1188-R PNP Bipolar Transistor SOT-89
2SB1188-R PNP Bipolar Transistor SOT-89

Vceo:-32V

Ic:-2A

Pd:0.5W

VCE(sat)@Ic,Ib:-0.5V@-2A,-0.2mA

fT:100MHz

Working temperature:150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description:

The High-Performance NPN Transistor is designed for demanding electronic applications requiring robust performance and reliability. With a Vceo rating of -32V and a maximum Ic of -2A, this transistor delivers dependable power handling and switching capabilities.


FEATURES

● Low VCE(sat).

● VCE(sat) = -0.5V (Typ.)

● (IC/IB = -2A / -0.2A)


Application:

The 2SB1188-R PNP digital transistor is perfectly suited for a variety of electronic applications, including:

● High-Frequency Circuits: Ideal for RF amplifiers and high-speed switching applications due to its 100MHz transition frequency.

● Power Amplifiers: Suitable for use in power amplification stages where high current handling and low saturation voltage are crucial.

● Switching Circuits: Efficient for digital and analog switching tasks, offering reliable performance with low power loss.

● Automotive and Industrial Electronics: Robust enough to withstand extreme temperatures and demanding environments.


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