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2SC2712-G NPN Bipolar Transistor SOT-23

Vceo:50V

Ic:150mA

Pd:150mW

VCE:-

fT:80MHz

Working temperature:25℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description

The 2SC2712-G is a high-performance NPN bipolar transistor housed in a compact SOT-23 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.


Features

● High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
● Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)
● High hFE: hFE = 70 700
● Low noise: NF = 1dB (typ.), 10dB (max)


Application

Dual NPN small signal surface mount transistor.


2SC2712-G SOT-23_00.jpg

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