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Description
The 2SC3356 is an ultra-high frequency low-noise transistor utilizing planar NPN silicon epitaxial bipolar technology. It features high power gain, low noise figure, wide dynamic range, and excellent current characteristics.Packaged in SOT-23 SMD format, it is primarily used in VHF, UHF, and CATV broadband low-noise amplifiers.
FEATURES
● High gain: |S21e|2 typical value is 12 dB,@ VCE=10V, IC=20mA, f=1GHz.
● Low noise: NF typical value is 1.5dB,@ VCE=10V, IC=7mA, f=1GHz
● Gain bandwidth product: fT typical value is 7GHz, @ VCE=10V, IC=20mA, f=1GHz
Application
● Signal Amplification: Ideal for low-current signal amplification in compact electronic devices.
● Switching Circuits: Perfect for low-power switching applications requiring small size and reliable performance.
● Consumer Electronics: Suitable for use in portable devices where high-frequency operation and minimal space are crucial.
● RF Applications: Effective for radio frequency circuits where compactness and high-frequency response are important.
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