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2SC3357RE PNP Bipolar Transistor SOT-89 2SC3357RE PNP Bipolar Transistor SOT-89 2SC3357RE PNP Bipolar Transistor SOT-89
2SC3357RE PNP Bipolar Transistor SOT-89

Vceo:20V

Ic:100mA

Pd:1200W

VCE: 12V

Working temperature:150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description

The 2SC3357 is an ultra-high-frequency low-noise power transistor, utilizing a planar NPN silicon epitaxial bipolar process. It offers high power gain,low noise figure,a wide dynamic range, and excellent current characteristics. Packaged in a SOT-89 surface-mount configuration, it is primarily used in VHF, UHF,and CATV applications for high-frequency broadband low-noise amplification.

FEATURES

High gain: |S21e| typically 10dB
● Low noise: NF typically 1.7dB
● Gain-bandwidth product: fT typically 6.5GHz

Application

● Power Amplifiers: Ideal for high-power amplification applications where high current handling and thermal stability are crucial.

● Switching Power Supplies: Suitable for use in power supplies requiring efficient switching and high power dissipation.

● Motor Drivers: Perfect for driving large motors and other high-current components in industrial and automotive systems.

● High-Current Circuits: Designed to manage substantial current loads in various electronic and electrical systems.


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