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2SC3585R45 NPN Bipolar Transistor SOT-23-3L 2SC3585R45 NPN Bipolar Transistor SOT-23-3L 2SC3585R45 NPN Bipolar Transistor SOT-23-3L
2SC3585R45 NPN Bipolar Transistor SOT-23-3L

Vceo:10V

Ic:35mA

Pd:200mW

VCE:10V

fT:10MHz

Working temperature:150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description

The 2SC3585 is an ultra-high-frequency low-noise transistor using planar NPN silicon epitaxial bipolar technology. It features high power gain, low noise figure, wide dynamic range, and ideal current characteristics. It comes in a SOT-23-3L surface-mount package and is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.

FEATURES

● Highgain: |S21e|typically5.5dB

● Lownoise: NFtypically2.5dB

● Gain-bandwidthproduct: fTtypically10GHz


Application

● RF and Microwave Amplifiers: Its high transition frequency makes it ideal for use in radio frequency (RF) and microwave amplifier circuits.

● Signal Processing: Perfect for signal processing applications requiring compact size and high-frequency operation.

● Switching Circuits: Suitable for low-power switching applications where space is limited but performance remains critical.

● Consumer Electronics: Ideal for use in portable and handheld devices that demand reliable operation in a small form factor.


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