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2SD1664-R NPN Bipolar Transistor SOT-89 2SD1664-R NPN Bipolar Transistor SOT-89 2SD1664-R NPN Bipolar Transistor SOT-89
2SD1664-R NPN Bipolar Transistor SOT-89

Vceo:32V

Ic:1A

Pd:0.5W

VCE(sat)@Ic,Ib:0.15V@500mA,50mA

fT:150MHz

Working temperature:150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description:

2SD1664-R NPN Digital Transistor designed to meet the rigorous demands of modern electronic applications. With a maximum collector-emitter voltage (VCEO) of 32V and a current rating (IC) of 1A, this transistor is engineered to deliver reliable and efficient performance across a wide range of operating conditions. The device features a maximum power dissipation (PD) of 0.5W, making it suitable for compact and power-sensitive applications


FEATURES

● Low VCE(sat)

● Compliments to 2SB1132


Application:

The 2SD1664-R NPN Digital Transistor is perfectly suited for a variety of electronic applications, including:

● Switching Power Supplies: Ideal for use in power supply circuits where efficient switching and high current handling are crucial.

● Signal Amplification: Suitable for amplification in RF and audio applications, leveraging its high transition frequency and low saturation voltage.

● Motor Drives: Effective in driving small to medium-sized motors, benefiting from its high current capacity and thermal endurance.

● Voltage Regulation: Useful in voltage regulation circuits requiring stable performance across a wide range of temperatures and voltages.


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