+86 755-83044319

中文 English

Products

Products

/

/

Diode/Transistor/Rectifier

/

/

Bipolar Transistor (BJT)

2SC3357 RF

2SC3357 RF

2SC3357 RF

2SC3357 RF

Type:NPN

Vceo:12V

Ic:100mA

Pd:1200mW

fT:6.5GHz

Inquiry Datasheet

Product Details

2SC3357 RF SOT-89_0.png

Previous:2N5401 PNP Bipolar Transistor TO-92
Next:2SC3357 RE

News recommendation

2024-12-20TSMC's Kumamoto factory will begin mass production within this year, utilizing 22/28nm and 12/16nm process technologies to manufacture logic ICs.
2024-12-19Deepen Cooperation and Create the Future Together | The 2024 SLKOR Annual Agent Seminar was successfully concluded
2024-12-19Silicon Zhen has announced the successful mass production of QRNG-10, the first-ever millimeter-level quantum random number generator chip developed in-house in China
2024-12-18How does SLKOR achieve rapid growth without overtime work? (I)
2024-12-18TSMC Chairman and CEO C.C. Wei stated that many customers have mentioned AI and applications in their future expectations and plans. However, more customers are optimistic about multifunctional robots rather than automobiles
2024-12-17TSMC has publicly unveiled its 2nm process, which increases transistor density by 15% compared to the 3nm chips, boosts performance by 15% at the same power consumption, and reduces power consumption by 24-35% for the same performance.
2024-12-16CATL and Stellantis are planning to build a joint venture battery factory in Zaragoza, Aragon, Spain, with Stellantis as the primary customer. The total construction period is expected to last four years
2024-12-16According to the latest data from the China Charging Alliance, the number of charging stations nationwide has exceeded 12 million, marking a 49.5% year-on-year increase
2024-12-12TSMC is expected to certify an ultra-large version of its CoWoS (Chip-on-Wafer) packaging technology by 2027. This technology will offer intermediate layer sizes of up to nine mask sizes and support 12 HBM4 memory stacks. It is speculated that it will be adopted by ultra-high-end AI processors between 2027 and 2028.
2024-12-11TSMC's 2nm process trial production results show a yield rate exceeding 60%, with plans to begin mass production of 2nm chips next year

Popular tags

LDO SCR IGBT MOSFET Optocoupler SiC SBD TVS Diode ESD Diode Zener Diode Schottky Diode Bipolar Transistor Hall Sensors Gate Driver IC

Products Recommended

see more +

Site Map | 萨科微 | 金航标 | Slkor | Kinghelm
RU | FR | DE | IT | ES | PT | JA | KO | AR | TR | TH | MS | VI | MG | FA | ZH-TW | HR | BG | SD| GD | SN | SM | PS | LB | KY | KU | HAW | CO | AM | UZ | TG | SU | ST | ML | KK | NY | ZU | YO | TE | TA | SO| PA| NE | MN | MI | LA | LO | KM | KN
| JW | IG | HMN | HA | EO | CEB | BS | BN | UR | HT | KA | EU | AZ | HY | YI |MK | IS | BE | CY | GA | SW | SV | AF | FA | TR | TH | MT | HU | GL | ET | NL | DA | CS | FI | EL | HI | NO | PL | RO | CA | TL | IW | LV | ID | LT | SR | SQ | SL | UK

Copyright ©2015-2025 Shenzhen Slkor Micro Semicon Co., Ltd

Advisory Service

Service hotline

+86 0755-83044319

Hall Effect Sensor

Get product information

WeChat

WeChat