Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description
2SC4901 is an ultrahigh frequency low noise transistor; with the plane NPN silicon epitaxy bipolar technology, it has characteristics such as high power gains, low noises and large dynamic ranges. With the SOT-323 package, it is applicable to high-density surface paster installation, mainly used for high frequency low noise wide-band amplifiers such as VHF, UHF and CATV.

Features:

● Type: NPN Bipolar Transistor
● V_ceo (Collector-Emitter Voltage): 9V
● I_c (Collector Current): 50mA
● P_d (Power Dissipation): 100mW
● f_T (Transition Frequency): 9GHz
● High-speed switching capability suitable for GHz range applications.
● Low noise performance ideal for signal amplification in RF circuits.
● Compact size and efficient thermal management for reliable operation.

Applications:

● RF Amplification: Suitable for use in RF amplifiers where high gain and low noise are critical, such as in communication systems and radar applications.
● High-Frequency Switching: Ideal for switching applications in GHz frequency circuits, including signal routing and modulation.
● Oscillator Circuits: Can be employed in oscillator circuits where stable frequency generation up to 9GHz is required.
● Wireless Systems: Used in wireless transmitters and receivers to amplify and process signals in the GHz range.

Main Characteristics 
High gains:︱S21_e︱²typical value of 13.5dB                      @ VCE=5V, IC=20mA, f=0.9GHz
Low noise: NF typical value of 1.6dB                                   @ VCE=5V, IC=5mA, f=0.9GHz
Gain bandwidth product: fT typical value of 9GHz              @ VCE=5V, IC=20mA, f=0.9GHz