Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description:
The 2SD1898-R is an epitaxial silicon NPN transistor engineered for applications requiring reliable switching and amplification in electronic circuits. Packaged in a TO-220F format, this transistor boasts a maximum collector-emitter voltage (Vceo) of 80V and can handle a continuous collector current (I_c) of 1A. With a power dissipation (P_d) capability of 2W, the 2SD1898-R ensures robust performance under varying load conditions. Featuring an ultra-low collector cut-off current (I_cbo) of 1μA and a low saturation voltage (VCE(sat)) of 150mV at 500mA collector current and 50mA base current, it offers efficient operation with minimal power loss.

Features:
● High V_CEO, V_CEO=80V
● High I_C, I_C=1A (DC)
● Low V_{CE (sat)}
● Complementary to 2SB1260

Applications:
The 2SD1898-R transistor is suitable for a wide range of applications:

● Switching Power Supplies: Efficiently switches high currents in DC-DC converters and voltage regulators.
● Motor Control: Drives motors and actuators in automotive and industrial systems.
● Audio Amplifiers: Provides clean amplification with low distortion in audio circuits.
● RF Amplification: Supports high-frequency signal amplification up to 100MHz.
● Power Management: Manages power efficiently in various electronic devices and equipment.