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BCW66 NPN Bipolar Transistor SOT-23 BCW66 NPN Bipolar Transistor SOT-23 BCW66 NPN Bipolar Transistor SOT-23
BCW66 NPN Bipolar Transistor SOT-23

Vceo:45V

Ic:600mA

Pd:300mW

VCE(sat)@Ic,Ib:0.3V@100mA,10mA

fT:100MHz

Working temperature:150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description:

This high-performance component boasts a Vceo rating of 45V and can handle a collector current (Ic) of up to 600mA, ensuring robust and reliable operation in various circuits. With a power dissipation capability of 300mW and a saturation voltage (VCE(sat)) of just 0.3V at 100mA collector current and 10mA base current, this transistor offers exceptional efficiency and low power loss.

FEATURES

● For Switching and AF Amplifier Applications.

Application:

● Switching Circuits: Its low saturation voltage and high-speed capabilities make it suitable for efficient switching operations.

● Amplification: With a high transition frequency, it is well-suited for audio and RF amplification tasks.

● Power Management: Its robust current handling and power dissipation characteristics make it effective in power regulation and control circuits.

● Signal Processing: Ideal for applications requiring reliable and high-speed signal processing.


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