Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    

Description

This chip is manufactured using silicon epitaxial technology, featuring high power gain,  wide bandwidth, and characteristics of low noise, low leakage current, and small junction capacitance. It offers a large dynamic range and ideal current linearity. It is primarily used in ultra-high frequency microwave, VHF, UHF, and CATV high-frequency  broadband low-noise amplifiers, such as satellite TV tuners, digital TV set-top boxes, CATV  amplifiers, analog-digital cordless phones, radar motion detectors, wireless security  alarms, RF modules, and fiber optic modules.

Features

Collector-emitter breakdown voltage: BVCEO=12V maximum collector current: ICM=150mA power dissipation: PC=700mW characteristic frequency: fT=9.0GHz Package type: SOT143B, Body marking: RIs-##.

Application

● High-Frequency Amplifiers: Perfect for use in RF and microwave amplifiers where high frequency and low noise performance are critical.
● Switching Circuits: Ideal for high-speed switching applications in communication devices and electronic systems.Signal ● Processing: Suitable for use in signal processing circuits where precise and reliable amplification is required.
● Oscillators: Can be employed in oscillator circuits where high-frequency stability and low power loss are essential.