Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    

Description

The transistor is suitable for operation with a collector current of 30 to 40mA and a voltage range of 3 to 5V;  It can amplify signals for oscillator circuits operating at frequencies up to 3.8 GHz; At 1.8 GHz, the noise is approximately 1.1 dB

FEATURES

Collector-Emitter Voltage (Vceo): 6V – Provides robust performance in low-voltage circuits.Collector Current (Ic): 80mA – Suitable for moderate current handling tasks.Power Dissipation (Pd): 380mW – Ensures efficient heat management and durability.Transition Frequency (fT): 11GHz – Delivers high-speed switching capabilities for high-frequency applications.Working Temperature: 150℃ (Tj) – Operates reliably in high-temperature environments.

Application

Ideal for RF and microwave applications, this transistor excels in high-frequency circuits, signal amplification, and switching. Its compact design makes it suitable for use in mobile devices, communication equipment, and other electronic systems requiring efficient space utilization and high-speed performance.