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BFS520-C NPN Bipolar Transistor SOT-323 BFS520-C NPN Bipolar Transistor SOT-323 BFS520-C NPN Bipolar Transistor SOT-323
BFS520-C NPN Bipolar Transistor SOT-323

Vceo:12V

Ic:100mA

Pd:150mW

VCE:-

fT:8GHz

Working temperature:150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description

The BFS520 is a high-frequency low-noise transistor manufactured using planar NPN silicon epitaxial bipolar technology. It features high power gain and low noise characteristics. Packagedin an ultra- compact SOT-323 package, it is suitable for high-density surface-mount applications,primarily used in VHF, UHF, CATV, and other high-frequency low-noise amplifiers.

FEATURES

Collector-Emitter Voltage (Vceo): 12VCollector Current (Ic): 100mAPower Dissipation (Pd): 150mWTransition Frequency (fT): 8GHzWorking Temperature: Up to 150°C (Tj)


Application

Ideal for use in high-frequency circuits, RF amplifiers, and signal processing systems where rapid switching and stability are crucial. Its high-temperature tolerance makes it suitable for industrial and aerospace applications, providing durability in extreme conditions.


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