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Description
This chip is manufactured using silicon epitaxial technology,featuring high power gain amplification, wide bandwidth, low noise, low leakage current, small junction capacitance characteristics, a large dynamic range, and ideal current linearity.
It is mainly applied in ultra-high frequency microwave and high-frequency broadband low-noise amplifiers, such as CATV video amplifiers, wireless transceiver modules, various long-distance remote controllers, security alarms, analog-digital cordless telephones, and other related products.Suitable for medium power and high frequency signal amplification.
Features
The BFU580Q features a high transition frequency of 10GHz, allowing for excellent performance in high-speed switching and RF applications. Its low power dissipation of 1000mW and maximum collector current of 100mA make it suitable for various circuit designs. Additionally, the transistor operates effectively at high junction temperatures up to 150°C, ensuring reliability and durability in challenging environments.
Application
● High-Frequency Amplifiers: Perfect for use in RF and microwave amplifiers where high frequency and low noise performance are critical.
● Switching Circuits: Ideal for high-speed switching applications in communication devices and electronic systems.Signal ● Processing: Suitable for use in signal processing circuits where precise and reliable amplification is required.
● Oscillators: Can be employed in oscillator circuits where high-frequency stability and low power loss are essential.
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