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BFU590Q NPN Bipolar Transistor SOT-89 BFU590Q NPN Bipolar Transistor SOT-89 BFU590Q NPN Bipolar Transistor SOT-89
BFU590Q NPN Bipolar Transistor SOT-89

Vceo:15V

Ic:300mA

Pd:2000mW

VCE(sat):-

fT:8.5GHz

Working temperature:-40~150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description

● This chip is manufactured using silicon epitaxial technology, featuring high power gain amplification, wide bandwidth,low noise, low leakage current, small junction capacitance characteristics, a large dynamic range, and ideal current linearity.

● It is mainly appliedin ultra-high frequency microwave and high frequency broadband low-noise amplifiers, such as CATV video amplifiers, wireless

transceiver modules, various long-distance remote controllers, security alarms, analog-digital cordless telephones, and other related products.Suitable for medium power and high frequency signal amplification.

● Collector-emitter breakdown voltage: BVCEO = 15V, maximum collector current:
    ICM = 200mA, power dissipation:PC = 2W,characteristic frequency: fT = 8.5GHz.

● Package type: SOT-89 Body marking (Marking): S59


Features

● Vceo (Collector-Emitter Voltage): 15V, ensuring reliable operation within various circuit configurations.

● Ic (Collector Current): Capable of handling up to 300mA, making it suitable for both low and medium power applications.

● Pd (Power Dissipation): High power dissipation of 2000mW, which allows for effective heat management and increased longevity of the device.

● fT (Transition Frequency): An impressive transition frequency of 8.5GHz, allowing for high-speed operation in RF applications.

● Working Temperature Range: Operates efficiently in extreme conditions, with a temperature range of -40℃ to 150℃, ensuring reliability in diverse environments.


Application:

The BFU590Q is perfectly suited for applications in:

● RF Amplifiers: Ideal for use in radio frequency applications where high speed and gain are critical.

● Switching Circuits: Can be utilized in various switching applications due to its high current handling capabilities.

● Signal Processing: Functions effectively in signal processing circuits, enhancing overall system performance.

● Consumer Electronics: Suitable for a wide range of consumer electronic devices, providing efficient power management and signal amplification.


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