Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    

Description

This chip is manufactured using silicon epitaxial technology, featuring high power gain amplification, wide bandwidth,low noise, low leakage current, small junction capacitance characteristics, a large dynamic range, and ideal current linearity.
It is mainly appliedin ultra-high frequency microwave and high frequency broadband low-noise amplifiers, such as CATV video amplifiers, wireless transceiver modules, various long-distance remote controllers, security alarms, analog-digital cordless telephones, and other related products.Suitable for medium power and high frequency signal amplification.

Features

● Collector-emitter breakdown voltage: BVCEO = 15V, maximum collector current: ICM = 200mA, power dissipation:PC = 2W,characteristic frequency: fT = 8.5GHz.

Application

● High-Voltage Switching: Ideal for applications requiring reliable high-voltage switching with compact form factor.

● Power Amplifiers: Suitable for use in power amplifier circuits where high voltage and current handling are necessary.

● Pulse Circuits: Effective in circuits that demand robust pulse switching capabilities and stability.

● Industrial Electronics: Perfect for industrial equipment and control systems where durability and high voltage tolerance are crucial.