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Description:
The MMBT1616AK NPN Bipolar Transistor designed to deliver exceptional efficiency and reliability for a wide range of electronic applications. With a collector-emitter voltage (Vceo) rating of 60V and a collector current (Ic) capability of 1A, this transistor is engineered to handle demanding tasks while maintaining optimal performance. The device boasts a power dissipation (Pd) of 350mW, ensuring robust operation even under significant loads. Featuring a low VCE(sat) of 0.3V at 1A and 50mA base current (Ib), this transistor offers minimal saturation voltage for improved power efficiency. Additionally, with a transition frequency (fT) of 100MHz, it is well-suited for high-frequency applications.
FEATURES
● Power dissipation
Application:
● Switching Circuits: Ideal for use in electronic switching applications where low saturation voltage and high current handling are essential.
● Amplifier Stages: Suitable for use in amplifier stages requiring high-frequency operation and reliable power handling.
● Signal Processing: Perfect for high-speed signal processing tasks, where fast switching and minimal signal distortion are crucial.
● Power Management: Effective in power management circuits, providing stable performance and efficient power conversion.
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