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MMDT5401 PNP Bipolar Transistor SOT-363 MMDT5401 PNP Bipolar Transistor SOT-363 MMDT5401 PNP Bipolar Transistor SOT-363
MMDT5401 PNP Bipolar Transistor SOT-363

Vceo:-150V

Ic:600mA

Pd:200mW

VCE(sat)@Ic,Ib:0.2V@10mA,1mA

fT:100MHz

Working temperature:150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description:

The MMDT5401 PNP Digital Transistor engineered to deliver exceptional performance in high-voltage and high-frequency applications. With a Vceo rating of 150V and a maximum Ic of 600mA, this transistor is designed to excel in demanding environments where reliability and efficiency are paramount. Its robust construction supports a high working temperature of up to 150°C, making it suitable for various industrial and high-temperature applications.


FEATURES

● For high voltage amplifier applications

Application:

The 2SA1661-Y PNP Digital Transistor is perfectly suited for a variety of electronic applications, including:

● Power Amplifiers: Ideal for use in power amplification circuits where high voltage and current handling are essential.

● Switching Circuits: Perfect for high-speed switching applications due to its low VCE(sat) and high transition frequency.

● RF and Signal Processing: Suitable for high-frequency applications, including radio frequency circuits and signal processing systems.

● Industrial Equipment: Reliable performance in industrial settings where high operating temperatures are common.


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