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MMDT5451 NPN+PNP Bipolar Transistor SOT-363 MMDT5451 NPN+PNP Bipolar Transistor SOT-363 MMDT5451 NPN+PNP Bipolar Transistor SOT-363
MMDT5451 NPN+PNP Bipolar Transistor SOT-363

Vceo:160V

Ic:0.2A

Pd:0.2W

VCE(sat)@Ic,Ib:0.15V@10mA,1mA

fT:100MHz

Working temperature:150℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description:

The MMDT5451 NPN+PNP Bipolar Transistor is engineered to deliver exceptional efficiency and reliability in high-frequency applications. With a robust collector-emitter voltage rating of 160V and a maximum collector current of 0.2A, this transistor is designed for high-stress environments, ensuring long-lasting performance under demanding conditions.

FEATURES

● Designed for high-stress environments.

Application:

● High-Frequency Amplifiers: Ideal for use in RF amplifiers and high-speed switching circuits, leveraging its high transition frequency and low saturation voltage.

● Power Switching: Effective in power switching applications where reliable performance and high voltage tolerance are crucial.

● Signal Processing: Suitable for applications involving signal amplification and processing, benefiting from its low saturation voltage and high-frequency response.

● Automotive Electronics: Reliable operation at elevated temperatures makes it suitable for automotive electronics and other high-temperature environments.


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