Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    

Description:

The MMST5551 NPN Digital Transistor engineered to deliver exceptional reliability and efficiency in demanding electronic applications. With a robust maximum collector-emitter voltage (V_ceo) of 160V and a maximum collector current (I_c) of 600mA, this transistor is designed for use in high-voltage and high-current circuits. It excels in scenarios requiring high-frequency operation and has a wide operational temperature range, making it suitable for challenging environments.

FEATURES

● Small Surface Mount Package

● Ideal for Medium Power Amplification and Switching

● Complementary to MMST5401

Application:

The MMST5551 NPN transistor is ideal for a variety of applications, including:

● High-Voltage Switching: Suitable for circuits requiring high collector-emitter voltage with reliable performance.

● RF and High-Frequency Circuits: With a transition frequency of 100MHz, it is perfect for radio frequency applications and signal amplification.

● Power Amplification: Ideal for use in power amplification stages where high current handling and low saturation voltage are crucial.

● Industrial and Automotive Electronics: Designed to operate reliably in extreme temperatures, making it suitable for industrial controls and automotive systems.