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S8550T NPN Bipolar Transistor SOT-523

Vceo:-25V

Ic:0.5A

Pd:0.3W

VCE:-

fT:150mHz

Working temperature:25℃@(Tj)

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description

The S8550T is a high-performance NPN bipolar transistor designed for a variety of applications requiring reliable switching and amplification. This compact SOT-523 package offers a Vceo of -25V and a collector current (Ic) capability of up to 0.5A, making it suitable for medium power applications. With a power dissipation (Pd) of 0.3W and a transition frequency (fT) of 150mHz, it ensures efficient operation across a wide range of frequencies.

Features

High Voltage Rating: Vceo of -25V ensures reliable operation in demanding environments.
Current Handling: Capable of managing up to 0.5A of collector current.
Power Dissipation: Rated at 0.3W, allowing efficient thermal management.
Frequency Response: High transition frequency (fT) of 150mHz supports fast switching applications.
Temperature Resilience: Operates effectively at a maximum junction temperature of 150°C.


Application

Ideal for use in general-purpose switching, audio amplifiers, and signal processing circuits, the S8550T is perfect for consumer electronics, automotive applications, and industrial devices where compact size and reliability are crucial.


S8550T SOT-523_00.jpg

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