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SS30101-Q NPN Bipolar Transistor SOT-23

Vceo:40V

Ic:2A

Pd:300mW

VCE(sat):0.5V

fT:100MHz

Working temperature:-

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description

Introducing the SS30101-Q NPN Bipolar Transistor, a compact and efficient solution for your electronic needs. With a collector-emitter voltage rating (Vceo) of 40V and a maximum collector current (Ic) of 2A, this transistor is designed to deliver reliable performance in various applications. Featuring a low saturation voltage (VCE(sat)) of 0.5V and a transition frequency (fT) of 100MHz, the SS30101-Q is ideal for high-speed switching applications.


Features

● Voltage Rating (Vceo): 40V - suitable for a variety of medium-voltage applications.

● Collector Current (Ic): 2A - capable of handling significant current loads.

● Power Dissipation (Pd): 300mW - allows for efficient thermal management.

● Saturation Voltage (VCE(sat)): 0.5V - minimizes power loss during operation.

● Transition Frequency (fT): 100MHz - supports high-speed switching.

● Package Type: SOT-23 - compact size for space-constrained designs.

Applications

● Signal Amplification: Ideal for low to medium-power amplification in audio and RF circuits.

● Switching Applications: Effective for use in electronic switching devices and relay drivers.

● Motor Control: Suitable for controlling small motors in consumer electronics and robotics.

● Power Management Circuits: Perfect for voltage regulation and power distribution applications.

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