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B772 PNP Epitaxial Silicon Transistor SOT-89 B772 PNP Epitaxial Silicon Transistor SOT-89 B772 PNP Epitaxial Silicon Transistor SOT-89
B772 PNP Epitaxial Silicon Transistor SOT-89

Type: PNP

VCEO: 30V

IC: 3A

PC: 500mW

VCE(sat)@IC,IB: 500mV@2A,200mA

hFE@VCE,IC: 400@-2V,-1A

fT: 80MHz

Working Temperature: +150℃@(Tj)

Product Details

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


Description

30V, 3A PNP Epitaxial Silicon Transistor.


Features

● Low Speed Switching

● Complement to KSD882


Applications

● Audio Frequency Power Amplifier.


Quick reference data

Symbol Parameter Conditions Max Unit
VCEO collector-emitter voltage open base 30 V
IC collector current 3 A
VCEsat collector-emitter
saturation voltage
IC = 2A; IB = 200mA 0.5 V


B772_00.jpg


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